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20N60C3-VB TO247 Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
**Model: 20N60C3-VB TO247**
VBsemi's 20N60C3-VB TO247 is a high-performance single N-channel MOSFET manufactured using SJ_Multi-EPI technology. It has a drain-source voltage of 650V and a drain current carrying capacity of 20A, suitable for medium and high voltage applications. This product is packaged in TO247 and has superior thermal and electrical properties, suitable for various power and electronic fields.
**Model: 20N60C3-VB TO247**
VBsemi's 20N60C3-VB TO247 is a high-performance single N-channel MOSFET manufactured using SJ_Multi-EPI technology. It has a drain-source voltage of 650V and a drain current carrying capacity of 20A, suitable for medium and high voltage applications. This product is packaged in TO247 and has superior thermal and electrical properties, suitable for various power and electronic fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### 2. Detailed parameter description
- **Model**: 20N60C3-VB TO247
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 160mΩ @ VGS=10V
- **ID (drain current)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: 20N60C3-VB TO247
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 160mΩ @ VGS=10V
- **ID (drain current)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### 3. Application fields and module examples
1. **Power converter**
- **Power inverter**: 20N60C3-VB TO247 is suitable for switch control in medium and high voltage power inverters to achieve efficient power conversion and stable current output.
- **High voltage DC transmission**: Used for switch control in high voltage DC transmission systems to provide efficient power transmission and management.
2. **Industrial power supply**
- **Industrial UPS**: In industrial UPS, 20N60C3-VB TO247 is used as a switching element to ensure that the equipment provides stable power output during power outages.
- **Industrial power module**: Suitable for switch control in industrial power modules to provide reliable power supply and stability.
3. **Electric vehicle charging system**
- **Fast charging pile**: Used for power control in electric vehicle fast charging piles to provide efficient charging solutions.
- **Battery Management System**: Applicable to battery charge and discharge control in electric vehicle battery management systems, providing efficient power management solutions.
4. **Solar Inverter**
- **Solar Inverter**: 20N60C3-VB TO247 is a key component in solar inverters to achieve efficient conversion of solar power to power grids.
- **Photovoltaic Power Generation System**: Applicable to power management and inverter control in photovoltaic power generation systems to improve the energy efficiency and stability of the system.
Through the application of the above fields and modules, 20N60C3-VB TO247 has demonstrated its stability and reliability in medium and high voltage environments, and is an ideal choice for a variety of high-performance electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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