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20N50H TO3P-VB Product details
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### 20N50H-VB TO3P Product Introduction
20N50H-VB TO3P is a high-performance single N-channel MOSFET designed for applications requiring high voltage and high current. It uses SJ_Multi-EPI technology, has low on-resistance and high drain current capability, and is suitable for a variety of high-performance power management and switching applications.
20N50H-VB TO3P is a high-performance single N-channel MOSFET designed for applications requiring high voltage and high current. It uses SJ_Multi-EPI technology, has low on-resistance and high drain current capability, and is suitable for a variety of high-performance power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 500V | 3.5V | 18A | 210mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 500V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 500V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### 20N50H TO3P-VB Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 210mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 210mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
### Applications and Module Examples
**Industrial Power**:
20N50H-VB TO3P is suitable for high-voltage switches and inverters in industrial power systems. Its high drain current capability and low on-resistance ensure stability and efficiency under high load conditions.
**Electric Vehicle Charger**:
In electric vehicle chargers, this product can be used for switching power supplies and DC-DC converters. Its high rated voltage and current can meet the requirements of electric vehicle chargers for high-performance components.
**Solar Inverter**:
20N50H-VB TO3P is suitable for high-voltage switches in solar inverters. Its excellent thermal characteristics and reliability ensure stable operation under various environmental conditions.
**Medical Equipment**:
In medical equipment, this product can be used for high-performance power management modules and motor control. Its high reliability and stability make it an ideal choice for medical equipment manufacturers.
20N50H-VB TO3P has demonstrated its superior performance as a high-performance MOSFET through its wide application in various high-voltage and high-performance applications, providing engineers with a reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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