中文
English
20N40-VB Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
**Model: 20N40-VB**
VBsemi's 20N40-VB is a high-performance single N-channel MOSFET manufactured using SJ_Multi-EPI technology. It has a drain-source voltage of 500V and a drain current carrying capacity of 40A, suitable for high-voltage applications. This product is packaged in TO247 and has superior thermal and electrical properties, suitable for various power and electronic fields.
**Model: 20N40-VB**
VBsemi's 20N40-VB is a high-performance single N-channel MOSFET manufactured using SJ_Multi-EPI technology. It has a drain-source voltage of 500V and a drain current carrying capacity of 40A, suitable for high-voltage applications. This product is packaged in TO247 and has superior thermal and electrical properties, suitable for various power and electronic fields.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### 2. Detailed parameter description
- **Model**: 20N40-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 500V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.8V
- **RDS(ON) (on-resistance)**: 80mΩ @ VGS=10V
- **ID (drain current)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: 20N40-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 500V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.8V
- **RDS(ON) (on-resistance)**: 80mΩ @ VGS=10V
- **ID (drain current)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### 3. Application fields and module examples
1. **Industrial power system**
- **Power inverter**: 20N40-VB is suitable for power inverters in industrial power systems, providing high-efficiency power conversion and stable current output.
- **Power modulator**: In the power modulator, 20N40-VB can be used as a switching element to achieve efficient power management and regulation.
2. **Electric vehicle charging system**
- **Charging pile**: In the charging pile used for electric vehicle charging, 20N40-VB is used as a key switching element to ensure the stability and efficiency of the charging process.
- **Battery management system**: Suitable for battery charging and discharging control in the battery management system of electric vehicles, providing high-efficiency power management solutions.
3. **Solar inverter**
- **Solar inverter**: 20N40-VB is used as a key component in the solar inverter to achieve efficient conversion of solar power to the power network.
- **Photovoltaic power generation system**: Applicable to power management and inverter control in photovoltaic power generation systems to improve the energy efficiency and stability of the system.
4. **High-voltage power supply**
- **Medical equipment**: Applicable to high-voltage power supply control in medical equipment to ensure the safe operation and stability of the equipment.
- **Industrial equipment**: Applicable to high-voltage power supply modules in industrial equipment to provide reliable power supply and control.
Through the application of the above fields and modules, 20N40-VB has demonstrated its stability and reliability in high-voltage and high-current environments, and is an ideal choice for a variety of high-performance electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
