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20N40H TO3P-VB Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
20N40H-VB TO3P is a high voltage single N-channel MOSFET produced by VBsemi, packaged as TO3P, suitable for high voltage power switch and motor drive applications. The device adopts a multi-epitaxial structure (SJ_Multi-EPI), has a high drain-source voltage and current capability, and is suitable for working in a high voltage environment.
20N40H-VB TO3P is a high voltage single N-channel MOSFET produced by VBsemi, packaged as TO3P, suitable for high voltage power switch and motor drive applications. The device adopts a multi-epitaxial structure (SJ_Multi-EPI), has a high drain-source voltage and current capability, and is suitable for working in a high voltage environment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 500V | 3.5V | 18A | 210mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 500V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 500V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### 2. Detailed parameter description
- **Model**: 20N40H-VB TO3P
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: 30 (±V)
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 210mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: SJ_Multi-EPI (multiple epitaxial structure)
Domain and module applications：
### 3. Application fields and module examples
1. **Power switch**: 20N40H-VB TO3P is suitable for high-voltage switching power supplies, such as high-voltage DC regulators and power inverters. Its high drain-source voltage and low on-resistance make it an ideal choice for stable high-voltage output.
2. **Motor driver**: In situations where high voltage and high current drive are required, such as industrial motor control systems and electric vehicle controllers, 20N40H-VB TO3P can provide reliable power switching and protection.
3. **Power inverter**: Suitable for high-power inverters such as solar inverters and electric vehicle chargers, providing high-efficiency power conversion and voltage regulation functions.
4. **High-voltage regulator**: As a key component of the high-voltage regulator, 20N40H-VB TO3P can achieve stable regulation of the input voltage and ensure the stability of the output voltage.
5. **Medical equipment**: In medical equipment that requires high voltage power, such as X-ray generators and medical ultrasonic equipment, this MOSFET can provide reliable power switching and control.
From the above application examples, it can be seen that 20N40H-VB TO3P has a wide range of application prospects in high voltage and high power applications, with stable and reliable performance and efficient power conversion capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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