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2030M-VB Product details

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Product introduction：

### Product Introduction

VBsemi's 200N4F3-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of 20V. The device is manufactured using Trench technology and has excellent performance and reliability. Its drain-source on-resistance (RDS(ON)) is 15mΩ (at VGS=4.5V) and 2mΩ (at VGS=10V), and the maximum drain current (ID) is 180A. This makes the 200N4F3-VB suitable for high-power, high-frequency applications such as power switches, motor drivers, etc.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P-Channel ±30V 1.6/-1.7V ±8A 24/50mΩ 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds18 Technology
SOP8 Dual-N+P-Channel ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds6 Technology
SOP8 Dual-N+P-Channel ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P-Channel

### Detailed parameter description

- **Package**：TO220
- **Configuration**：Single-N-Channel
- **VDS**：40V
- **VGS**：20V（±）
- **Vth**：3V
- **RDS(ON)**：15mΩ @ VGS=4.5V；2mΩ @ VGS=10V
- **ID**：180A
- **Technology**：Trench

Domain and module applications：


### Applications and module examples

200N4F3-VB is suitable for high-power, high-frequency applications, including but not limited to:

1. **Power switch**: Due to its low drain-source on-resistance and high power characteristics, 200N4F3-VB can be used for high-power power switches, such as server power supplies, power amplifiers, etc.

2. **Motor driver**: In applications that require high-power motor drivers, such as industrial machinery, electric vehicles, etc., 200N4F3-VB can achieve efficient motor control.

3. **Power tools**: In power tools that require high power and high efficiency, 200N4F3-VB can be used as a switching device for motor drivers to provide efficient energy conversion.

4. **Power amplifier**: Due to its high power characteristics, 200N4F3-VB is suitable for applications that require high-power amplifiers, such as audio equipment and car audio.

In short, 200N4F3-VB is a high-power, high-frequency MOSFET suitable for various high-power fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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