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200N6F3-VB TO263 Product details
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VBsemi 200N6F3-VB TO263 MOSFET Product Introduction:
VBsemi's 200N6F3-VB TO263 is a single-channel N-channel MOSFET in a TO263 package. The product has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS, ±V) of 20V, a threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 12mΩ @VGS=4.5V and an on-resistance (RDS(ON)) of 3.2mΩ @VGS=10V, and a drain current (ID) of 210A. It uses Trench technology.
VBsemi's 200N6F3-VB TO263 is a single-channel N-channel MOSFET in a TO263 package. The product has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS, ±V) of 20V, a threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 12mΩ @VGS=4.5V and an on-resistance (RDS(ON)) of 3.2mΩ @VGS=10V, and a drain current (ID) of 210A. It uses Trench technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 210A | 12mΩ | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
200N6F3-VB TO263 detailed parameter description:
- Package: TO263
- Type: Single channel N-channel
- VDS (drain-source voltage): 60V
- VGS (gate-source voltage): 20V (±V)
- Threshold voltage (Vth): 3V
- On-resistance (RDS(ON)): 12mΩ @ VGS=4.5V, 3.2mΩ @ VGS=10V
- Drain current (ID): 210A
- Technology: Trench
- Package: TO263
- Type: Single channel N-channel
- VDS (drain-source voltage): 60V
- VGS (gate-source voltage): 20V (±V)
- Threshold voltage (Vth): 3V
- On-resistance (RDS(ON)): 12mΩ @ VGS=4.5V, 3.2mΩ @ VGS=10V
- Drain current (ID): 210A
- Technology: Trench
Domain and module applications：
Product application areas and module examples:
1. Power management module: 200N6F3-VB TO263 is suitable for power switching circuits in high-power power management modules, such as power adapters and power tools.
2. Electric vehicle drive: Due to its high drain current and low on-resistance, 200N6F3-VB TO263 can be used in power switching circuits in electric vehicle drive systems.
3. Industrial control systems: In industrial control systems that require high voltage and high current, 200N6F3-VB TO263 can provide stable and reliable performance.
4. Power inverter: In the power inverter, 200N6F3-VB TO263 can be used in power switching circuits to improve energy conversion efficiency.
The above is the product introduction, detailed parameter description and application examples of VBsemi 200N6F3-VB TO263 MOSFET in different fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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