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200N4F3-VB TO263 Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi's 200N4F3-VB is a single N-channel MOSFET with a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) of 20V, and a threshold voltage (Vth) of 3V. It uses Trench technology and has excellent performance and reliability. This MOSFET has an RDS(ON) of 2.5mΩ@VGS=4.5V and 2mΩ@VGS=10V, and an ID of 150A, making it suitable for high-power applications.
VBsemi's 200N4F3-VB is a single N-channel MOSFET with a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) of 20V, and a threshold voltage (Vth) of 3V. It uses Trench technology and has excellent performance and reliability. This MOSFET has an RDS(ON) of 2.5mΩ@VGS=4.5V and 2mΩ@VGS=10V, and an ID of 150A, making it suitable for high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 40V | 3V | 150A | 2.5mΩ | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Parameter Description:
- **Model: ** 200N4F3-VB
- **Packaging: ** TO263
- **Configuration: ** Single N-channel
- **VDS (drain-source voltage): ** 40V
- **VGS (gate-source voltage): ** 20V (±)
- **Threshold voltage (Vth): ** 3V
- **RDS(ON) (@ VGS=4.5V): ** 2.5mΩ
- **RDS(ON) (@ VGS=10V): ** 2mΩ
- **ID (drain current): ** 150A
- **Technology: ** Trench
- **Model: ** 200N4F3-VB
- **Packaging: ** TO263
- **Configuration: ** Single N-channel
- **VDS (drain-source voltage): ** 40V
- **VGS (gate-source voltage): ** 20V (±)
- **Threshold voltage (Vth): ** 3V
- **RDS(ON) (@ VGS=4.5V): ** 2.5mΩ
- **RDS(ON) (@ VGS=10V): ** 2mΩ
- **ID (drain current): ** 150A
- **Technology: ** Trench
Domain and module applications：
### Applicable fields and modules:
Due to the high power characteristics of 200N4F3-VB, it is suitable for some high power occasions, such as:
1. **Power module:** 200N4F3-VB can be used in switching power modules to provide high efficiency and reliability.
2. **Electric vehicle control:** In the motor controller of electric vehicles, this MOSFET can be used in motor drivers to achieve high efficiency motor control.
3. **Industrial motor drive:** In industrial motor drive systems, 200N4F3-VB can be used as a switching element of the motor driver to achieve high efficiency drive control.
These are some examples of application fields of 200N4F3-VB MOSFET. Due to its high power characteristics, the scope of application is relatively wide, and it can be used in many fields and modules that require high power switching control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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