中文
English
200N15N-VB TO263 Product details
Back to previous pageProduct introduction：
### Product Introduction
200N15N-VB is a single N-channel field effect transistor (MOSFET) using trench technology, with a drain-source voltage (VDS) of up to 150V and a drain current (ID) capability of 128A. The device adopts TO263 package and is suitable for a variety of fields and modules, providing high-performance power control.
200N15N-VB is a single N-channel field effect transistor (MOSFET) using trench technology, with a drain-source voltage (VDS) of up to 150V and a drain current (ID) capability of 128A. The device adopts TO263 package and is suitable for a variety of fields and modules, providing high-performance power control.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 150V | 3V | 128A | 7.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 150V | 3V | 128A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 150V | 3V | 128A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Parameter Description
- **Model:** 200N15N-VB TO263
- **Package:** TO263
- **Structure:** Single N-channel
- **VDS (Drain-Source Voltage):** 150V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Threshold Voltage):** 3V
- **RDS(ON) (On-Resistance):** 7.5mΩ @ VGS=10V
- **ID (Drain Current):** 128A
- **Technology:** Trench
Domain and module applications：
### Applications and Module Examples
1. **Power Inverter:** Due to its high drain current and low on-resistance characteristics, this MOSFET can be used in power switching circuits in high-performance power inverters, such as solar inverters, UPS systems, etc.
2. **Electric Vehicle Charging Station:** In the power switching circuit in the electric vehicle charging station, 200N15N-VB can ensure high efficiency and reliability of the charging process.
3. **Industrial Power Supply:** In industrial power supplies that require high power density and efficient energy conversion, this MOSFET can be used in switching power supplies and DC-DC converters, etc.
4. **Motor Control:** In motor control systems that require high current and low voltage drop, 200N15N-VB can be used in applications that drive motors and control motor speed.
5. **Battery Management:** In battery management systems that require high power and low power loss, this MOSFET can be used to protect batteries and control the charging and discharging process.
The above are some examples of application areas and modules of 200N15N-VB, but they are not limited to them. The specific application depends on the design requirements and system needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
