VBP1254N Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 20(±V) | 3.5V | 60A | 40 (mΩ) | Trench |
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 250V
- Standard gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (miohms) at gate-source voltage 10V: 40
- Drain current (ID): 60A
- Technology: Trench
Package: TO247
Domain and module applications:
1. Industrial power field: Because VBP1254N has high rated voltage and large drain current, it is suitable for high-power modules in industrial power systems, such as industrial power supplies and frequency converters. In industrial power supplies, it can be used as a power switching device for DC voltage regulators to achieve voltage regulation and overload protection.
2. Electric vehicles: This MOSFET can be used in power control modules in electric vehicles and hybrid vehicles, such as motor drivers and battery management systems. Its high voltage and low drain-source resistance characteristics ensure efficient operation and long-term stability of electric vehicle systems.
3. High-performance servers: In high-performance servers in data centers, VBP1254N can be used as a key component of power converters and power management modules, providing efficient power conversion and stable power supply. Its high rated voltage and large drain current can meet the stringent power management requirements of server systems.
Technical support:
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