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1NK60Z-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi's 1NK60Z-VB is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It uses Plannar technology and has excellent performance and reliability. This MOSFET has an RDS(ON) of 10000mΩ@VGS=4.5V and 8000mΩ@VGS=10V, and an ID of 1A, which is suitable for some low-power applications.
VBsemi's 1NK60Z-VB is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It uses Plannar technology and has excellent performance and reliability. This MOSFET has an RDS(ON) of 10000mΩ@VGS=4.5V and 8000mΩ@VGS=10V, and an ID of 1A, which is suitable for some low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel | 650V | 3.5V | 1A | 10000mΩ | 8000mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel | 650V | 3.5V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel | 650V | 3.5V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel |
### Parameter Description:
- **Model: ** 1NK60Z-VB
- **Package: ** SOT223
- **Configuration: ** Single N-channel
- **VDS (drain-source voltage): ** 650V
- **VGS (gate-source voltage): ** 30V (±)
- **Threshold voltage (Vth): ** 3.5V
- **RDS(ON) (@ VGS=4.5V): ** 10000mΩ
- **RDS(ON) (@ VGS=10V): ** 8000mΩ
- **ID (drain current): ** 1A
- **Technology: ** Plannar
- **Model: ** 1NK60Z-VB
- **Package: ** SOT223
- **Configuration: ** Single N-channel
- **VDS (drain-source voltage): ** 650V
- **VGS (gate-source voltage): ** 30V (±)
- **Threshold voltage (Vth): ** 3.5V
- **RDS(ON) (@ VGS=4.5V): ** 10000mΩ
- **RDS(ON) (@ VGS=10V): ** 8000mΩ
- **ID (drain current): ** 1A
- **Technology: ** Plannar
Domain and module applications：
### Applicable fields and modules:
Due to the low power characteristics of 1NK60Z-VB, it is suitable for some low power occasions, such as:
1. **Sensor interface:** In the sensor interface circuit, the sensor signal needs to be amplified and processed, and 1NK60Z-VB can be used as a switching element of the signal amplifier.
2. **Low power power switch:** For low power power switches, 1NK60Z-VB can provide reliable switching control.
3. **LED lighting control:** In the LED lighting control circuit, 1NK60Z-VB can be used as a switching element of the LED to achieve control of the LED light.
These are some examples of application fields of 1NK60Z-VB MOSFET, but due to its low power characteristics, the scope of application is relatively narrow, and it is mainly used for switching control in low power circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
