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1NK60ZR-VB Product details
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### Product Introduction
VBsemi's 1NK60ZR-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of 20V. The device is manufactured using Plannar technology and has excellent performance and reliability. Its drain-source on-resistance (RDS(ON)) is 6667mΩ (at VGS=10V) and the maximum drain current (ID) is 1A. This makes the 1NK60ZR-VB suitable for low-power, low-frequency applications such as power switches, low-power inverters, etc.
VBsemi's 1NK60ZR-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of 20V. The device is manufactured using Plannar technology and has excellent performance and reliability. Its drain-source on-resistance (RDS(ON)) is 6667mΩ (at VGS=10V) and the maximum drain current (ID) is 1A. This makes the 1NK60ZR-VB suitable for low-power, low-frequency applications such as power switches, low-power inverters, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel | 600V | 2V | 1A | 6667mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel | 600V | 2V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel | 600V | 2V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel |
### Detailed parameter description
- **Package**：TO92
- **Configuration**：Single-N-Channel
- **VDS**：600V
- **VGS**：20V（±）
- **Vth**：2V
- **RDS(ON)**：6667mΩ @ VGS=10V
- **ID**：1A
- **Technology**：Plannar
Domain and module applications：
### Applications and Module Examples
1NK60ZR-VB is suitable for low-power, low-frequency applications, including but not limited to:
1. **Power Switch**: Due to its low drain-source on-resistance and low power characteristics, 1NK60ZR-VB can be used for low-power power switches, such as small appliances, sensors, etc.
2. **Low Power Inverter**: In applications that require a low-power inverter, 1NK60ZR-VB can achieve simple and effective inverter control, such as low-power electric vehicles, solar inverters, etc.
3. **Sensor Interface**: Due to its low drain-source on-resistance, 1NK60ZR-VB can be used as a switch in sensor interface circuits to provide reliable signal conditioning.
4. **LED control**: In applications that require low-power LED control, 1NK60ZR-VB can be used as a switch for LED lighting controllers, providing efficient energy conversion.
In short, 1NK60ZR-VB is a MOSFET for low-power, low-frequency applications, suitable for a variety of low-power fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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