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1NF20-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
1NF20-VB is a single N-channel field effect transistor (MOSFET) using trench technology, with a drain-source voltage (VDS) of up to 200V and a drain current (ID) capability of 1A. The device is packaged in SOT223 and is suitable for a variety of fields and modules, providing reliable performance and power control.
1NF20-VB is a single N-channel field effect transistor (MOSFET) using trench technology, with a drain-source voltage (VDS) of up to 200V and a drain current (ID) capability of 1A. The device is packaged in SOT223 and is suitable for a variety of fields and modules, providing reliable performance and power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel | 200V | 3V | 1A | 1200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel | 200V | 3V | 1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel | 200V | 3V | 1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel |
### Parameter Description
- **Model:** 1NF20-VB
- **Package:** SOT223
- **Structure:** Single N-channel
- **VDS (Drain-Source Voltage):** 200V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Threshold Voltage):** 3V
- **RDS(ON) (On-Resistance):** 1200mΩ @ VGS=10V
- **ID (Drain Current):** 1A
- **Technology:** Trench
- **Model:** 1NF20-VB
- **Package:** SOT223
- **Structure:** Single N-channel
- **VDS (Drain-Source Voltage):** 200V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Threshold Voltage):** 3V
- **RDS(ON) (On-Resistance):** 1200mΩ @ VGS=10V
- **ID (Drain Current):** 1A
- **Technology:** Trench
Domain and module applications：
### Applications and Module Examples
1. **Power Management:** Due to its moderate voltage and current characteristics, this MOSFET can be used in switching power supplies, DC-DC converters, and power factor correction (PFC) circuits.
2. **Battery Management:** In systems that need to protect batteries and control the charging and discharging process, 1NF20-VB can be used as a protection switch element in battery management systems.
3. **LED Driver:** In applications that need to control the power of LED lighting systems, this MOSFET can be used as a power switch element in LED drivers.
4. **Industrial Control:** Moderate parameters make this MOSFET an ideal power switch element in industrial control systems for applications such as driving motors, controlling temperature and lighting.
5. **Automotive Electronics:** In automotive electronic systems, 1NF20-VB can be used in applications such as engine control units, lighting controls, and electric vehicle chargers.
The above are some examples of areas and modules where 1NF20-VB can be applied, but it is not limited to these. The specific application depends on the design requirements and system needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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