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1N65L-TF3-T-VB Product details
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### Product Introduction:
VBsemi's 1N65L-TF3-T-VB is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It uses Plannar technology and has excellent performance and reliability. This MOSFET has an RDS(ON) of 1700mΩ@VGS=10V and an ID of 2A, which is suitable for some low-power applications.
VBsemi's 1N65L-TF3-T-VB is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It uses Plannar technology and has excellent performance and reliability. This MOSFET has an RDS(ON) of 1700mΩ@VGS=10V and an ID of 2A, which is suitable for some low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Parameter Description:
- **Model: ** 1N65L-TF3-T-VB
- **Packaging: ** TO220F
- **Configuration: ** Single N-channel
- **VDS (drain-source voltage): ** 650V
- **VGS (gate-source voltage): ** 30V (±)
- **Threshold voltage (Vth): ** 3.5V
- **RDS(ON): ** 1700mΩ @ VGS=10V
- **ID (drain current): ** 2A
- **Technology: ** Plannar
- **Model: ** 1N65L-TF3-T-VB
- **Packaging: ** TO220F
- **Configuration: ** Single N-channel
- **VDS (drain-source voltage): ** 650V
- **VGS (gate-source voltage): ** 30V (±)
- **Threshold voltage (Vth): ** 3.5V
- **RDS(ON): ** 1700mΩ @ VGS=10V
- **ID (drain current): ** 2A
- **Technology: ** Plannar
Domain and module applications：
### Applicable fields and modules:
Due to the low power characteristics of 1N65L-TF3-T-VB, it is suitable for some low power occasions, such as:
1. **LED lighting control:** In the LED lighting control circuit, 1N65L-TF3-T-VB can be used as the switching element of the LED to achieve the control of the LED light.
2. **Low power inverter:** For low power inverters, 1N65L-TF3-T-VB can provide reliable switching control.
3. **Power tool control:** In power tools, this MOSFET can be used in motor drivers to achieve reliable switching control and low loss.
These are some examples of application fields of 1N65L-TF3-T-VB MOSFET, but due to its low power characteristics, the scope of application is relatively narrow, mainly used for switching control in low power circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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