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1N60-VB TO252 Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi 1N60-VB TO252 is a single N-channel power MOSFET with a drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of 30V. It uses Plannar technology and is suitable for low-power electronic applications.
VBsemi 1N60-VB TO252 is a single N-channel power MOSFET with a drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of 30V. It uses Plannar technology and is suitable for low-power electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 2A | 3440mΩ | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description:
- **Package: ** TO252
- **Device type: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 650V
- **Maximum gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **Drain-source on-resistance (RDS(ON)): **
- When VGS = 4.5V: 3440mΩ
- When VGS = 10V: 4300mΩ
- **Drain current (ID): ** 2A
- **Technology: ** Plannar
- **Package: ** TO252
- **Device type: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 650V
- **Maximum gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **Drain-source on-resistance (RDS(ON)): **
- When VGS = 4.5V: 3440mΩ
- When VGS = 10V: 4300mΩ
- **Drain current (ID): ** 2A
- **Technology: ** Plannar
Domain and module applications：
### Applications and module examples:
1. **Low-power switching power supply:** 1N60-VB TO252 is suitable for low-power switching power supplies and DC-DC converters, which is economical and practical in some low-power applications.
2. **LED lighting controller:** In LED lighting systems, this MOSFET can be used in switch controllers to achieve efficient energy conversion in lighting systems.
3. **Automotive electronics:** In the field of automotive electronics, this MOSFET can be used in vehicle-mounted DC-DC converters and car light controllers to provide efficient energy conversion and power control.
4. **Industrial control systems:** 1N60-VB TO252 can be used as a low-power switching device in industrial control systems to provide reliable power control.
The above examples illustrate the potential application areas of 1N60-VB TO252 MOSFET in low-power applications and demonstrate its practical application value in various scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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