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1N60-VB TO251 Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi's 1N60-VB TO251 is a single N-channel MOSFET with high withstand voltage and low on-resistance. It uses Plannar technology and is suitable for low power applications.
VBsemi's 1N60-VB TO251 is a single N-channel MOSFET with high withstand voltage and low on-resistance. It uses Plannar technology and is suitable for low power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
### Detailed parameter description:
- **Packaging**: TO251
- **Structure**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar
Domain and module applications：
### Application Examples:
1. **Low Power Supply**: Due to its low drain current and low power characteristics, 1N60-VB TO251 is suitable for low power power modules such as power switches and voltage regulators.
2. **LED Driver**: In low power LED lighting applications, this MOSFET can be used as a driver to provide stable current output.
3. **Power Tools**: In low power power tools, this MOSFET can be used for motor drive to provide reliable switching control.
4. **Smart Home Devices**: In low power smart home devices, this MOSFET can be used for switching control and power management to improve the efficiency and reliability of the device.
5. **Low Power Inverter**: In inverters that require low power output, this MOSFET can be used to control power conversion to improve the efficiency of the system.
The above is the product introduction, detailed parameter description and application examples of 1N60-VB TO251.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
