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1N60L-TM3-T-VB Product details
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VBsemi 1N60L-TM3-T-VB TO251 MOSFET Product Introduction:
VBsemi's 1N60L-TM3-T-VB TO251 is a single-channel N-channel MOSFET in a TO251 package. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, ±V) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 4300mΩ @VGS=10V, and a drain current (ID) of 2A. It uses Plannar technology.
VBsemi's 1N60L-TM3-T-VB TO251 is a single-channel N-channel MOSFET in a TO251 package. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, ±V) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 4300mΩ @VGS=10V, and a drain current (ID) of 2A. It uses Plannar technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
1N60L-TM3-T-VB TO251 detailed parameter description:
- Package: TO251
- Type: Single channel N-channel
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): 30V (±V)
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 4300mΩ @ VGS=10V
- Drain current (ID): 2A
- Technology: Plannar
Domain and module applications：
Product application areas and module examples:
1. Power adapter: 1N60L-TM3-T-VB TO251 is suitable for the switching power supply circuit in the power adapter, which can achieve high-efficiency energy conversion.
2. LED lighting driver: Since 1N60L-TM3-T-VB TO251 has a high drain-source voltage and moderate on-resistance, it can be used in LED lighting driver circuits to ensure the stable operation of LED lamps.
3. Electric vehicle charging piles: In electric vehicle charging piles, 1N60L-TM3-T-VB TO251 can be used in power switching circuits to improve charging efficiency.
4. Industrial control systems: In industrial control systems that require high voltage and moderate current, 1N60L-TM3-T-VB TO251 can provide stable and reliable performance.
The above is the product introduction, detailed parameter description and application examples of VBsemi 1N60L-TM3-T-VB TO251 MOSFET in different fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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