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VBP1204M Product details
Back to previous pageProduct introduction：
VBP1204M is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) produced by VBsemi. The device has the following detailed parameters:
- VDS(V): 200V - Drain-source voltage
- VGS(±V): 20V - Gate-source voltage
- Vth(V): 3V - Threshold voltage
- VGS=10V(mΩ): 400mΩ - On-resistance when gate-source voltage is 10V
- ID (A): 15A - Drain current
- Technology: Trench - Made using trench technology
- Package: TO247 - TO247 package form
VBP1204M MOSFET is suitable for applications requiring high power, high voltage and efficient energy conversion, including power electronic modules, electric vehicle modules and high frequency conversion modules.
- VDS(V): 200V - Drain-source voltage
- VGS(±V): 20V - Gate-source voltage
- Vth(V): 3V - Threshold voltage
- VGS=10V(mΩ): 400mΩ - On-resistance when gate-source voltage is 10V
- ID (A): 15A - Drain current
- Technology: Trench - Made using trench technology
- Package: TO247 - TO247 package form
VBP1204M MOSFET is suitable for applications requiring high power, high voltage and efficient energy conversion, including power electronic modules, electric vehicle modules and high frequency conversion modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 20（±V） | 3V | 15A | 400 (mΩ) | Trench |
Product model: VBP1204M
Brand: VBsemi
Parameters: Single N
VDS(V): 200
VGS(㊣V): 20
Vth(V): 3
VGS=10V(m次): 400
ID(A): 15
Technology: Trench
Package: TO247
Brand: VBsemi
Parameters: Single N
VDS(V): 200
VGS(㊣V): 20
Vth(V): 3
VGS=10V(m次): 400
ID(A): 15
Technology: Trench
Package: TO247
Domain and module applications：
VBP1204M is suitable for a variety of fields and modules, such as:
1. Power electronic modules: Due to its high drain-source voltage (200V) and drain current (15A) capabilities, VBP1204M is suitable for high-power power electronic modules such as industrial power supplies, power transmission and distribution systems. Its low on-resistance (400mΩ) and the advantages of trench technology manufacturing enable it to achieve efficient energy conversion and stable performance.
2. High-performance electric vehicle (EV) module: This device is suitable for high-performance electric vehicle power modules, such as electric vehicle drives, chargers and battery management systems. Its high voltage and current handling capabilities and low on-resistance can meet the requirements of electric vehicles for efficient energy conversion and long-term stability.
3. High-frequency conversion module: VBP1204M is suitable for conversion modules that require high-frequency operation, such as high-frequency switching power supplies, radio frequency communication systems and radio equipment. The advantages of its trench technology manufacturing enable it to have fast switching speed and low loss, making it suitable for high-frequency operation applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
