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1N60H-VB TO252 Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi's 1N60H-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V. The device is manufactured using Plannar technology and has excellent performance and reliability. Its drain-source on-resistance (RDS(ON)) is 3440mΩ (at VGS=4.5V) and 4300mΩ (at VGS=10V), and the maximum drain current (ID) is 2A. This makes the 1N60H-VB suitable for low-power, low-frequency applications such as power switches, low-power inverters, etc.
VBsemi's 1N60H-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V. The device is manufactured using Plannar technology and has excellent performance and reliability. Its drain-source on-resistance (RDS(ON)) is 3440mΩ (at VGS=4.5V) and 4300mΩ (at VGS=10V), and the maximum drain current (ID) is 2A. This makes the 1N60H-VB suitable for low-power, low-frequency applications such as power switches, low-power inverters, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 2A | 3440mΩ | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **Package**：TO252
- **Configuration**：Single-N-Channel
- **VDS**：650V
- **VGS**：30V（±）
- **Vth**：3.5V
- **RDS(ON)**：3440mΩ @ VGS=4.5V；4300mΩ @ VGS=10V
- **ID**：2A
- **Technology**：Plannar
- **Package**：TO252
- **Configuration**：Single-N-Channel
- **VDS**：650V
- **VGS**：30V（±）
- **Vth**：3.5V
- **RDS(ON)**：3440mΩ @ VGS=4.5V；4300mΩ @ VGS=10V
- **ID**：2A
- **Technology**：Plannar
Domain and module applications：
### Application Fields and Module Examples
1N60H-VB is suitable for low-power, low-frequency applications, including but not limited to:
1. **Power Switch**: Due to its low drain-source on-resistance and low power characteristics, 1N60H-VB can be used for low-power power switches, such as TVs, audio equipment, etc.
2. **Low-power Inverter**: In applications that require low-power inverters, such as home appliances, small electric vehicles, etc., 1N60H-VB can achieve simple and effective inverter control.
3. **Power Tools**: In power tools that require low power and high efficiency, 1N60H-VB can be used as a switching device for motor drivers to provide efficient energy conversion.
4. **LED Lighting**: Due to its low power characteristics, 1N60H-VB is suitable for low-power LED lighting drivers and other low-power lighting applications.
In short, 1N60H-VB is a low-power, low-frequency MOSFET suitable for various low-power fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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