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1N60H-VB TO251 Product details
Back to previous pageProduct introduction：
### Product Introduction
1N60H-VB is a single N-channel field effect transistor (MOSFET) using planar technology with a drain-source voltage (VDS) of up to 650V and a drain current (ID) capability of 2A. The device adopts TO251 package and is suitable for a variety of fields and modules, providing reliable performance and power control.
1N60H-VB is a single N-channel field effect transistor (MOSFET) using planar technology with a drain-source voltage (VDS) of up to 650V and a drain current (ID) capability of 2A. The device adopts TO251 package and is suitable for a variety of fields and modules, providing reliable performance and power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
### Parameter Description
- **Model:** 1N60H-VB TO251
- **Package:** TO251
- **Structure:** Single N-channel
- **VDS (Drain-Source Voltage):** 650V
- **VGS (Gate-Source Voltage):** ±30V
- **Vth (Threshold Voltage):** 3.5V
- **RDS(ON) (On-Resistance):** 4300mΩ @ VGS=10V
- **ID (Drain Current):** 2A
- **Technology:** Planar
- **Model:** 1N60H-VB TO251
- **Package:** TO251
- **Structure:** Single N-channel
- **VDS (Drain-Source Voltage):** 650V
- **VGS (Gate-Source Voltage):** ±30V
- **Vth (Threshold Voltage):** 3.5V
- **RDS(ON) (On-Resistance):** 4300mΩ @ VGS=10V
- **ID (Drain Current):** 2A
- **Technology:** Planar
Domain and module applications：
### Applications and Module Examples
1. **Low Power Applications:** Due to its lower drain current and high drain-source voltage characteristics, 1N60H-VB is suitable for low power applications such as power management, low power inverters, etc.
2. **LED Driver:** In the field of LED lighting, 1N60H-VB can be used as a power switching element in LED drivers to help achieve efficient energy conversion and stable lighting effects.
3. **Industrial Control:** In industrial control systems, 1N60H-VB can be used to drive small motors, control sensors and actuators, etc.
4. **Power Inverter:** In lower power inverters, this MOSFET can be used in power switching circuits, such as solar inverters, UPS systems, etc.
5. **Battery Management:** In battery management systems, 1N60H-VB can be used to protect batteries and control the charging and discharging process.
The above are some examples of application areas and modules of 1N60H-VB, but they are not limited to them. The specific application depends on the design requirements and system needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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