VBP1202N Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 20(±V) | 4V | 96A | 21 (mΩ) | Trench |
- Transistor type: Single N
- Rated drain-source voltage (VDS): 200V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 4V
- Drain-source resistance (m次) at VGS=10V: 21
- Maximum drain current (ID): 96A
- Technology: Trench
Package: TO247
Domain and module applications:
1. **Industrial power module**: Because VBP1202N has higher rated voltage and current characteristics, it is suitable for power switching circuits in industrial power modules. For example, it can be used in industrial UPS, power inverter and other modules.
2. **Electric vehicle charging pile**: This transistor is suitable for the power switching circuit in the electric vehicle charging pile to control the power conversion and output of the charging pile to achieve fast charging of electric vehicles.
3. **Solar Inverter**: In solar photovoltaic systems, VBP1202N can be used in the power switching circuit of solar inverters to realize the conversion and output of solar energy. Its high voltage and current characteristics are suitable for high-power solar photovoltaic inverter applications.
4. **Industrial Motor Drivers**: Since this transistor has high maximum drain current and low drain-source resistance, it is suitable for power switching circuits in industrial motor drives, such as inverters and motor controllers. Power management module of other devices.
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