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19NM65N-VB TO247 Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi's 19NM65N-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V. The device is manufactured using SJ_Multi-EPI technology and has excellent performance and reliability. It has a drain-source on-resistance (RDS(ON)) of 300mΩ (at VGS=10V) and a maximum drain current (ID) of 15A. This makes the 19NM65N-VB ideal for medium and high voltage applications such as power management, motor drives and other areas that require high-performance MOSFETs.
VBsemi's 19NM65N-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V. The device is manufactured using SJ_Multi-EPI technology and has excellent performance and reliability. It has a drain-source on-resistance (RDS(ON)) of 300mΩ (at VGS=10V) and a maximum drain current (ID) of 15A. This makes the 19NM65N-VB ideal for medium and high voltage applications such as power management, motor drives and other areas that require high-performance MOSFETs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### Detailed parameter description
- **Package**：TO247
- **Configuration**：Single-N-Channel
- **VDS**：650V
- **VGS**：30V（±）
- **Vth**：3.5V
- **RDS(ON)**：300mΩ @ VGS=10V
- **ID**：15A
- **Technology**：SJ_Multi-EPI
Domain and module applications：
### Applicable fields and module examples
19NM65N-VB is suitable for various medium-high voltage, high-performance MOSFET applications, including but not limited to:
1. **Power management**: Due to its medium-high voltage characteristics, 19NM65N-VB can be used in medium-high voltage power management systems such as switching power supplies, power inverters and power converters to provide high efficiency and reliability.
2. **Motor drive**: In applications that require medium-high voltage motor drives, such as industrial machinery, electric vehicles, etc., 19NM65N-VB can achieve efficient motor control.
3. **Charging pile**: In applications that require medium-high voltage charging piles, 19NM65N-VB can be used to achieve efficient charging control and management.
4. **Industrial control**: In industrial control systems that need to control medium-high voltage voltage and current, 19NM65N-VB can be used as a switching device to achieve efficient energy conversion and control.
5. **Lighting Application**: Due to its high performance and reliability, 19NM65N-VB is suitable for LED lighting drivers and other medium and high voltage lighting applications.
In short, 19NM65N-VB is a powerful and reliable medium and high voltage MOSFET suitable for a variety of medium and high voltage application fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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