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19NM65N-VB TO220F Product details
Back to previous pageProduct introduction：
### Product Introduction
19NM65N-VB is a single N-channel field effect transistor (MOSFET) using planar technology with a drain-source voltage (VDS) of up to 650V and a drain current (ID) capability of 20A. The device adopts TO220F package and is suitable for a variety of fields and modules, providing reliable performance and efficient power control.
19NM65N-VB is a single N-channel field effect transistor (MOSFET) using planar technology with a drain-source voltage (VDS) of up to 650V and a drain current (ID) capability of 20A. The device adopts TO220F package and is suitable for a variety of fields and modules, providing reliable performance and efficient power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Parameter Description
- **Model:** 19NM65N-VB TO220F
- **Package:** TO220F
- **Structure:** Single N-channel
- **VDS (Drain-Source Voltage):** 650V
- **VGS (Gate-Source Voltage):** ±30V
- **Vth (Threshold Voltage):** 3.5V
- **RDS(ON) (On-Resistance):** 320mΩ @ VGS=10V
- **ID (Drain Current):** 20A
- **Technology:** Planar
Domain and module applications：
### Applications and Module Examples
1. **Power Inverter:** Due to its high voltage and current characteristics, this MOSFET can be used in the power switching circuit in the inverter, such as solar inverters, UPS systems and industrial power supplies.
2. **Electric Vehicle Charging Station:** In the power switching circuit in the electric vehicle charging station, 19NM65N-VB can ensure high efficiency and reliability of the charging process.
3. **Industrial Control System:** Moderate parameters make this MOSFET an ideal power switching element in industrial control systems, which can be used for applications such as driving motors, controlling electric furnaces and transformers.
4. **Power Management:** In the field of power management, this MOSFET can be used in switching power supplies, DC-DC converters and power factor correction (PFC) circuits.
5. **LED lighting:** In LED lighting systems that require high brightness and high efficiency, 19NM65N-VB can provide reliable power switching functions to help achieve energy-saving and environmentally friendly lighting solutions.
The above are some examples of areas and modules where 19NM65N-VB can be applied, but they are not limited to these. The specific application depends on the design requirements and system needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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