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19NM50N-VB TO220F Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi 19NM50N-VB TO220F is a single N-channel power MOSFET with a drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of 30V. It adopts SJ_Multi-EPI technology, has low on-resistance and high reliability, and is suitable for medium voltage power electronic applications.
VBsemi 19NM50N-VB TO220F is a single N-channel power MOSFET with a drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of 30V. It adopts SJ_Multi-EPI technology, has low on-resistance and high reliability, and is suitable for medium voltage power electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description:
- **Package: ** TO220F
- **Device type: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 650V
- **Maximum gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **Drain-source on-resistance (RDS(ON)): **
- At VGS = 10V: 160mΩ
- **Drain current (ID): ** 20A
- **Technology: ** SJ_Multi-EPI
- **Package: ** TO220F
- **Device type: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 650V
- **Maximum gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **Drain-source on-resistance (RDS(ON)): **
- At VGS = 10V: 160mΩ
- **Drain current (ID): ** 20A
- **Technology: ** SJ_Multi-EPI
Domain and module applications：
### Applications and module examples:
1. **Power modules:** 19NM50N-VB TO220F is suitable for medium voltage switching power supplies and DC-DC converters, and can be used in power modules in industrial and communication equipment.
2. **Electric vehicle charging piles:** Due to its high drain-source voltage and low on-resistance, 19NM50N-VB TO220F is suitable for power switches in electric vehicle charging piles.
3. **Solar inverters:** In solar inverters, this MOSFET can be used in DC-AC converters to provide high-efficiency energy conversion.
4. **Motor drives:** 19NM50N-VB TO220F can be used in switching devices in motor drives to help achieve efficient motor control.
5. **Industrial control systems:** This MOSFET can be used in medium voltage switching devices in industrial control systems to provide reliable power control.
These examples illustrate the use of the 19NM50N-VB TO220F MOSFET in medium voltage power applications, demonstrating its high performance and reliability in a variety of fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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