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19N10V-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi's 19N10V-VB is a single N-channel MOSFET with high performance and reliability. Using trench technology, it is suitable for applications in various fields and modules.
VBsemi's 19N10V-VB is a single N-channel MOSFET with high performance and reliability. Using trench technology, it is suitable for applications in various fields and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 25A | 57mΩ | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description:
- **Packaging**: TO252
- **Structure**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 57mΩ @ VGS=4.5V; 55mΩ @ VGS=10V
- **Drain current (ID)**: 25A
- **Technology**: Trench
- **Packaging**: TO252
- **Structure**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 57mΩ @ VGS=4.5V; 55mΩ @ VGS=10V
- **Drain current (ID)**: 25A
- **Technology**: Trench
Domain and module applications：
### Application Examples:
1. **Power Module**: Due to its high on-resistance and high drain current, 19N10V-VB is suitable for high-power power modules and can provide stable power conversion.
2. **Electric Vehicle Controller**: In electric vehicle controllers, this MOSFET can be used to control the power output of the motor and improve the performance of electric vehicles.
3. **Industrial Power**: In industrial power equipment, this MOSFET can be used in switching power supplies and UPS systems to provide stable and reliable power output.
4. **Motor Drive**: In motor drive modules that require large current output, this MOSFET can provide reliable switching control and low-loss power conversion.
5. **LED Lighting**: In LED lighting applications that require high brightness and high efficiency, this MOSFET can be used as a driver to provide stable current output.
The above is the product introduction, detailed parameter description and application examples of 19N10V-VB.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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