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19N10VL-TN3-T-VB Product details
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VBsemi 19N10VL-TN3-T-VB TO252 MOSFET Product Introduction:
VBsemi's 19N10VL-TN3-T-VB TO252 is a single-channel N-channel MOSFET in a TO252 package. The product has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS, ±V) of 20V, a threshold voltage (Vth) of 1.8V, an on-resistance (RDS(ON)) of 57mΩ @VGS=4.5V and an on-resistance (RDS(ON)) of 55mΩ @VGS=10V, and a drain current (ID) of 25A. It uses Trench technology.
VBsemi's 19N10VL-TN3-T-VB TO252 is a single-channel N-channel MOSFET in a TO252 package. The product has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS, ±V) of 20V, a threshold voltage (Vth) of 1.8V, an on-resistance (RDS(ON)) of 57mΩ @VGS=4.5V and an on-resistance (RDS(ON)) of 55mΩ @VGS=10V, and a drain current (ID) of 25A. It uses Trench technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 25A | 57mΩ | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
19N10VL-TN3-T-VB TO252 detailed parameter description:
- Package: TO252
- Type: Single channel N-channel
- VDS (drain-source voltage): 100V
- VGS (gate-source voltage): 20V (±V)
- Threshold voltage (Vth): 1.8V
- On-resistance (RDS(ON)): 57mΩ @ VGS=4.5V, 55mΩ @ VGS=10V
- Drain current (ID): 25A
- Technology: Trench
- Package: TO252
- Type: Single channel N-channel
- VDS (drain-source voltage): 100V
- VGS (gate-source voltage): 20V (±V)
- Threshold voltage (Vth): 1.8V
- On-resistance (RDS(ON)): 57mΩ @ VGS=4.5V, 55mΩ @ VGS=10V
- Drain current (ID): 25A
- Technology: Trench
Domain and module applications：
Product application areas and module examples:
1. Power management module: 19N10VL-TN3-T-VB TO252 is suitable for power switching circuits in power management modules that require high voltage and high current.
2. Automotive electronic systems: In automotive electronic systems, 19N10VL-TN3-T-VB TO252 can be used to drive motors and other power control applications to improve system efficiency.
3. Industrial control systems: In industrial control systems that require high voltage and high current, 19N10VL-TN3-T-VB TO252 can provide stable and reliable performance.
4. Power adapter: Because 19N10VL-TN3-T-VB TO252 has low on-resistance and high drain current, it is suitable for power switching circuits in power adapters to improve energy conversion efficiency.
The above is the product introduction, detailed parameter description and application examples of VBsemi 19N10VL-TN3-T-VB TO252 MOSFET in different fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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