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19N10VL-TN3-R-VB Product details
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**Product Introduction:**
19N10VL-TN3-R-VB MOSFET is a single N-channel power MOSFET with a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS, ±V) of 20V, and a threshold voltage (Vth) of 1.8V. The device uses Trench technology, has good conduction characteristics and low on-resistance, and is suitable for medium and high voltage applications.
19N10VL-TN3-R-VB MOSFET is a single N-channel power MOSFET with a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS, ±V) of 20V, and a threshold voltage (Vth) of 1.8V. The device uses Trench technology, has good conduction characteristics and low on-resistance, and is suitable for medium and high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 25A | 57mΩ | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
**Detailed parameters: **
- **VDS (drain-source voltage): ** 100V
- **VGS (gate-source voltage): ** 20V (±V)
- **Threshold voltage (Vth): ** 1.8V
- **On-resistance (RDS(ON)): **
- 57mΩ @ VGS=4.5V
- 55mΩ @ VGS=10V
- **Drain current (ID): ** 25A
- **Package: ** TO252
- **Technology: ** Trench
Domain and module applications：
**Applicable fields and modules:**
19N10VL-TN3-R-VB is suitable for various fields and modules, including but not limited to:
1. **Power supply module:** Used in modules such as switching power supplies, inverters and voltage regulators to provide efficient power conversion and control.
2. **Motor control:** Used in electric vehicles, industrial machinery and household appliances to achieve efficient motor control and drive.
3. **Lighting application:** Used in occasions such as LED lighting, indoor lighting and automotive lighting to provide efficient and reliable lighting solutions.
4. **Battery management:** Used in modules such as lithium battery management systems and chargers to achieve efficient battery management and charging control.
In general, the 19N10VL-TN3-R-VB MOSFET is a power device with excellent performance and wide application, suitable for various medium and high voltage application fields and modules.
19N10VL-TN3-R-VB is suitable for various fields and modules, including but not limited to:
1. **Power supply module:** Used in modules such as switching power supplies, inverters and voltage regulators to provide efficient power conversion and control.
2. **Motor control:** Used in electric vehicles, industrial machinery and household appliances to achieve efficient motor control and drive.
3. **Lighting application:** Used in occasions such as LED lighting, indoor lighting and automotive lighting to provide efficient and reliable lighting solutions.
4. **Battery management:** Used in modules such as lithium battery management systems and chargers to achieve efficient battery management and charging control.
In general, the 19N10VL-TN3-R-VB MOSFET is a power device with excellent performance and wide application, suitable for various medium and high voltage application fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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