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19N10L-TN3-R-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi's 19N10L-TN3-R-VB is a single N-channel MOSFET with a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of 20V, and a threshold voltage (Vth) of 1.8V. It uses Trench technology and has excellent performance and reliability. This MOSFET has an RDS(ON) of 57mΩ@VGS=4.5V and 55mΩ@VGS=10V, and an ID of 25A, suitable for a variety of fields and modules.
VBsemi's 19N10L-TN3-R-VB is a single N-channel MOSFET with a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of 20V, and a threshold voltage (Vth) of 1.8V. It uses Trench technology and has excellent performance and reliability. This MOSFET has an RDS(ON) of 57mΩ@VGS=4.5V and 55mΩ@VGS=10V, and an ID of 25A, suitable for a variety of fields and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 25A | 57mΩ | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Parameter Description:
- **Model: ** 19N10L-TN3-R-VB
- **Packaging: ** TO252
- **Configuration: ** Single N-channel
- **VDS (drain-source voltage): ** 100V
- **VGS (gate-source voltage): ** 20V (±)
- **Threshold voltage (Vth): ** 1.8V
- **RDS(ON) (@ VGS=4.5V): ** 57mΩ
- **RDS(ON) (@ VGS=10V): ** 55mΩ
- **ID (drain current): ** 25A
- **Technology: ** Trench
Domain and module applications：
### Applicable fields and modules:
1. **Power modules:** 19N10L-TN3-R-VB can be used in switching power modules, providing high efficiency and reliability.
2. **Power tools:** In power tools, this MOSFET can be used in motor drivers for reliable switching control and low losses.
3. **LED lighting:** In LED lighting, this MOSFET can be used in drive circuits for high efficiency and reliability.
4. **Electric vehicle chargers:** Due to its high drain-source voltage and low on-resistance, this MOSFET is suitable for electric vehicle chargers for high-efficiency charging.
These are some examples of application fields for the 19N10L-TN3-R-VB MOSFET, but it is not limited to this. It can also be used in many other fields and modules to meet various power and control needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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