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19N10L-TM3-T-VB Product details
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### Product Introduction
VBsemi's 19N10L-TM3-T-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of 20V. The device is manufactured using Trench technology and has excellent performance and reliability. Its drain-source on-resistance (RDS(ON)) is 110mΩ (at VGS=10V) and the maximum drain current (ID) is 15A. This makes the 19N10L-TM3-T-VB ideal for low and medium voltage applications such as power management, motor drives and other areas that require high-performance MOSFETs.
VBsemi's 19N10L-TM3-T-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of 20V. The device is manufactured using Trench technology and has excellent performance and reliability. Its drain-source on-resistance (RDS(ON)) is 110mΩ (at VGS=10V) and the maximum drain current (ID) is 15A. This makes the 19N10L-TM3-T-VB ideal for low and medium voltage applications such as power management, motor drives and other areas that require high-performance MOSFETs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 100V | 1.8V | 15A | 110mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
### Detailed parameter description
- **Package**：TO251
- **Configuration**：Single-N-Channel
- **VDS**：100V
- **VGS**：20V（±）
- **Vth**：1.8V
- **RDS(ON)**：110mΩ @ VGS=10V
- **ID**：15A
- **Technology**：Trench
Domain and module applications：
### Applicable fields and module examples
19N10L-TM3-T-VB is suitable for various low and medium voltage, high performance MOSFET applications, including but not limited to:
1. **Power management**: Due to its low and medium voltage characteristics, 19N10L-TM3-T-VB can be used in low and medium voltage power management systems such as switching power supplies, power inverters and power converters to provide high efficiency and reliability.
2. **Motor drive**: In applications that require low and medium voltage motor drives, such as industrial machinery, home appliances, etc., 19N10L-TM3-T-VB can achieve efficient motor control.
3. **Consumer electronics**: In consumer electronics products that require high performance, low and medium voltage MOSFETs, 19N10L-TM3-T-VB can be used in power management, DC-DC converters and other modules.
4. **LED lighting**: Due to its high performance and reliability, the 19N10L-TM3-T-VB is suitable for LED lighting drivers and other low and medium voltage lighting applications.
5. **Automotive electronics**: In automotive electronic systems, the 19N10L-TM3-T-VB can be used in electric vehicle charging piles, DC-DC converters, and other low and medium voltage applications.
In short, the 19N10L-TM3-T-VB is a powerful and reliable low and medium voltage MOSFET suitable for a variety of low and medium voltage applications and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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