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19AM3808NE-T1-PF-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi 19AM3808NE-T1-PF-VB is a dual N-channel + N-channel power MOSFET in SOT23-6 package. It has a drain-source voltage (VDS) of 20V and a maximum gate-source voltage (VGS) of 20V. It uses trench technology, has low on-resistance and high reliability, and is suitable for low-voltage power electronic applications.
VBsemi 19AM3808NE-T1-PF-VB is a dual N-channel + N-channel power MOSFET in SOT23-6 package. It has a drain-source voltage (VDS) of 20V and a maximum gate-source voltage (VGS) of 20V. It uses trench technology, has low on-resistance and high reliability, and is suitable for low-voltage power electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | 28mΩ | 24mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel |
### Detailed parameter description:
- **Package: ** SOT23-6
- **Device type: ** Dual N-channel + N-channel MOSFET
- **Drain-source voltage (VDS): ** 20V
- **Maximum gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 0.5~1.5V
- **Drain-source on-resistance (RDS(ON)): **
- When VGS = 2.5V: 28mΩ
- When VGS = 4.5V: 24mΩ
- **Drain current (ID): ** 6A
- **Technology: ** Trench
- **Package: ** SOT23-6
- **Device type: ** Dual N-channel + N-channel MOSFET
- **Drain-source voltage (VDS): ** 20V
- **Maximum gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 0.5~1.5V
- **Drain-source on-resistance (RDS(ON)): **
- When VGS = 2.5V: 28mΩ
- When VGS = 4.5V: 24mΩ
- **Drain current (ID): ** 6A
- **Technology: ** Trench
Domain and module applications：
### Applications and module examples:
1. **Mobile device charging management:** 19AM3808NE-T1-PF-VB can be used in battery charging management modules in mobile devices to help achieve efficient charging and discharging control.
2. **Power management module:** In low-voltage power management modules, this MOSFET can be used in switching power supplies and DC-DC converters to provide efficient energy conversion.
3. **LED lighting control:** In LED lighting systems, this MOSFET can be used in switch controllers to achieve high brightness and efficient energy conversion.
4. **Industrial automation control:** 19AM3808NE-T1-PF-VB is suitable for low-voltage switching devices in industrial control systems to provide reliable power control.
5. **Portable electronic devices:** In portable electronic devices, this MOSFET can be used in power management and battery management modules to help extend battery life and improve energy efficiency.
These examples illustrate the use of the 19AM3808NE-T1-PF-VB MOSFET in low voltage power applications, showcasing its high performance and reliability in a variety of fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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