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18T10GI-VB Product details
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### Product Introduction
VBsemi's 18T10GI-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of 20V. The device is manufactured using Trench technology and has excellent performance and reliability. It has a drain-source on-resistance (RDS(ON)) of 86mΩ (at VGS=10V) and a maximum drain current (ID) of 18A. This makes the 18T10GI-VB ideal for medium-voltage applications such as power management, motor drives and other areas that require high-performance MOSFETs.
VBsemi's 18T10GI-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of 20V. The device is manufactured using Trench technology and has excellent performance and reliability. It has a drain-source on-resistance (RDS(ON)) of 86mΩ (at VGS=10V) and a maximum drain current (ID) of 18A. This makes the 18T10GI-VB ideal for medium-voltage applications such as power management, motor drives and other areas that require high-performance MOSFETs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
- **Package**：TO220F
- **Configuration**：Single-N-Channel
- **VDS**：100V
- **VGS**：20V（±）
- **Vth**：1.8V
- **RDS(ON)**：86mΩ @ VGS=10V
- **ID**：18A
- **Technology**：Trench
Domain and module applications：
### Application Fields and Module Examples
18T10GI-VB is suitable for various medium voltage, high performance MOSFET applications, including but not limited to:
1. **Power Management**: Due to its medium voltage characteristics, 18T10GI-VB can be used in medium voltage power management systems such as switching power supplies, power inverters and power converters to provide high efficiency and reliability.
2. **Motor Drive**: In applications that require medium voltage motor drives, such as industrial machinery, home appliances, etc., 18T10GI-VB can achieve efficient motor control.
3. **Automotive Electronics**: In automotive electronic systems, 18T10GI-VB can be used in electric vehicle charging piles, DC-DC converters and other medium voltage applications to achieve efficient energy conversion.
4. **Industrial Control**: In industrial control systems that need to control medium voltage voltage and current, 18T10GI-VB can be used as a switching device to achieve efficient energy conversion and control.
5. **Lighting Application**: Due to its high performance and reliability, 18T10GI-VB is suitable for LED lighting drivers and other medium voltage lighting applications.
In short, 18T10GI-VB is a powerful and reliable medium voltage MOSFET suitable for a variety of medium voltage applications and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
