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18T10GH-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
18T10GH-VB is a single N-channel field effect transistor (MOSFET) using trench technology, with a drain-source voltage (VDS) up to 100V and a drain current (ID) capability of 15A. The device adopts TO252 package and is suitable for a variety of fields and modules, providing reliable performance and efficient power control.
18T10GH-VB is a single N-channel field effect transistor (MOSFET) using trench technology, with a drain-source voltage (VDS) up to 100V and a drain current (ID) capability of 15A. The device adopts TO252 package and is suitable for a variety of fields and modules, providing reliable performance and efficient power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Parameter Description
- **Model:** 18T10GH-VB
- **Package:** TO252
- **Structure:** Single N-channel
- **VDS (Drain-Source Voltage):** 100V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Threshold Voltage):** 1.8V
- **RDS(ON) (On-Resistance):** 114mΩ @ VGS=10V
- **ID (Drain Current):** 15A
- **Technology:** Trench
- **Model:** 18T10GH-VB
- **Package:** TO252
- **Structure:** Single N-channel
- **VDS (Drain-Source Voltage):** 100V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Threshold Voltage):** 1.8V
- **RDS(ON) (On-Resistance):** 114mΩ @ VGS=10V
- **ID (Drain Current):** 15A
- **Technology:** Trench
Domain and module applications：
### Applications and Module Examples
1. **Power Management:** In the field of low voltage power management, 18T10GH-VB can be used in switching power supplies, DC-DC converters and power factor correction (PFC) circuits.
2. **Automotive Electronics:** Due to its moderate voltage and current characteristics, this MOSFET can be used in automotive electronic systems such as engine control units, lighting controls and electric vehicle chargers.
3. **LED Lighting:** In LED lighting applications, 18T10GH-VB can provide reliable power switching functions to help achieve energy-saving and high-brightness lighting solutions.
4. **Industrial Control Systems:** The moderate parameters of 18T10GH-VB make it an ideal power switching element in industrial control systems for applications such as driving motors, controlling temperature and lighting.
5. **Power Tools:** For power control in power tools such as electric drills, electric saws, etc., this MOSFET provides a reliable and efficient solution.
The above are some examples of application areas and modules of 18T10GH-VB, but they are not limited to them. The specific application depends on the design requirements and system needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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