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18P06P-VB TO252 Product details
Back to previous pageProduct introduction：
VBsemi's MOSFET product 18P06P-VB is a single-channel P-channel device with a drain-source voltage (VDS) of -60V, a gate-source voltage (VGS, ±V) of 20V, and a threshold voltage (Vth) of -1.7V. The device uses Trench technology. The following is a detailed introduction and parameter description of the product:
**Product Introduction: **
18P06P-VB MOSFET is a high-performance single P-channel power MOSFET suitable for various low-voltage applications. It has low on-resistance and high conduction capability, and is suitable for applications requiring high performance and reliability. The device is widely used in various fields and modules, such as power management, motor control, battery management, automotive electronics, etc.
**Product Introduction: **
18P06P-VB MOSFET is a high-performance single P-channel power MOSFET suitable for various low-voltage applications. It has low on-resistance and high conduction capability, and is suitable for applications requiring high performance and reliability. The device is widely used in various fields and modules, such as power management, motor control, battery management, automotive electronics, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -60V | -1.7V | -35A | 58mΩ | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
**Detailed parameters:**
- **VDS (drain-source voltage):** -60V
- **VGS (gate-source voltage):** 20V (±V)
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 58mΩ @ VGS=4.5V
- 46mΩ @ VGS=10V
- **Drain current (ID):** -35A
- **Package:** TO252
- **Technology:** Trench
- **VDS (drain-source voltage):** -60V
- **VGS (gate-source voltage):** 20V (±V)
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 58mΩ @ VGS=4.5V
- 46mΩ @ VGS=10V
- **Drain current (ID):** -35A
- **Package:** TO252
- **Technology:** Trench
Domain and module applications：
**Applicable fields and modules:**
18P06P-VB is suitable for various fields and modules, including but not limited to:
1. **Power management:** Used in low-voltage regulators, battery management systems and other modules to provide efficient power conversion and control.
2. **Motor control:** Used in electric vehicles, industrial machinery and household appliances to achieve efficient motor control and drive.
3. **Automotive electronics:** Used in automotive engine control, body electronic systems and other fields to provide efficient and reliable electronic control solutions.
4. **Communication equipment:** Used in communication base stations, satellite communications and optical fiber communications to achieve efficient signal processing and transmission.
In general, 18P06P-VB MOSFET is a power device with excellent performance and wide application, suitable for various low-voltage application fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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