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18NM80-VB Product details
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### Product Introduction:
VBsemi's 18NM80-VB is a single N-channel MOSFET with 800V drain-source voltage (VDS), 30V gate-source voltage (VGS), and 3.5V threshold voltage (Vth). It uses SJ_Multi-EPI technology and has excellent performance and reliability. This MOSFET has an RDS(ON) of 205mΩ@VGS=10V and an ID of 20A, suitable for a variety of fields and modules.
VBsemi's 18NM80-VB is a single N-channel MOSFET with 800V drain-source voltage (VDS), 30V gate-source voltage (VGS), and 3.5V threshold voltage (Vth). It uses SJ_Multi-EPI technology and has excellent performance and reliability. This MOSFET has an RDS(ON) of 205mΩ@VGS=10V and an ID of 20A, suitable for a variety of fields and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 20A | 205mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Parameter Description:
- **Model: ** 18NM80-VB
- **Package: ** TO220F
- **Configuration: ** Single N-channel
- **VDS (drain-source voltage): ** 800V
- **VGS (gate-source voltage): ** 30V (±)
- **Threshold voltage (Vth): ** 3.5V
- **RDS(ON): ** 205mΩ @ VGS=10V
- **ID (drain current): ** 20A
- **Technology: ** SJ_Multi-EPI
Domain and module applications：
### Applicable fields and modules:
1. **Power modules:** 18NM80-VB can be used in switching power modules to provide high efficiency and reliability.
2. **Electric vehicle chargers:** Due to its high drain-source voltage and low on-resistance, this MOSFET is suitable for electric vehicle chargers to achieve high-efficiency charging.
3. **Industrial motor drives:** In industrial motor drives, this MOSFET can provide reliable switching control and low losses.
4. **Solar inverters:** The high voltage and low on-resistance of 18NM80-VB make it an ideal choice for solar inverters to improve the conversion efficiency of solar panels.
These are some examples of application fields for 18NM80-VB MOSFET, but it is not limited to this. It can also be used in many other fields and modules to meet various power and control needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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