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18NM80-VB TO263 Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi's 18NM80-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 800V and a gate-source voltage (VGS) of 30V. The device is manufactured using SJ_Multi-EPI technology and has excellent performance and reliability. It has a drain-source on-resistance (RDS(ON)) of 160mΩ (at VGS=10V) and a maximum drain current (ID) of 20A. This makes the 18NM80-VB ideal for high-voltage applications such as power management, motor drives and other areas that require high-performance MOSFETs.
VBsemi's 18NM80-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 800V and a gate-source voltage (VGS) of 30V. The device is manufactured using SJ_Multi-EPI technology and has excellent performance and reliability. It has a drain-source on-resistance (RDS(ON)) of 160mΩ (at VGS=10V) and a maximum drain current (ID) of 20A. This makes the 18NM80-VB ideal for high-voltage applications such as power management, motor drives and other areas that require high-performance MOSFETs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 800V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed parameter description
- **Package**：TO263
- **Configuration**：Single-N-Channel
- **VDS**：800V
- **VGS**：30V（±）
- **Vth**：3.5V
- **RDS(ON)**：160mΩ @ VGS=10V
- **ID**：20A
- **Technology**：SJ_Multi-EPI
Domain and module applications：
### Applications and Module Examples
18NM80-VB is suitable for a variety of applications that require high-voltage, high-performance MOSFETs, including but not limited to:
1. **Power Management**: The high drain-source voltage and low on-resistance of 18NM80-VB make it ideal for use in high-voltage power management systems such as switching power supplies, power inverters, and power converters.
2. **Motor Driver**: 18NM80-VB can be used for high-voltage motor drivers in electric vehicles, industrial machinery, and home appliances, where it can provide high efficiency and reliability.
3. **Industrial Control**: In industrial control systems that need to control high voltages and currents, 18NM80-VB can be used as a switching device to achieve efficient energy conversion.
4. **Battery Management**: Due to its high-voltage characteristics, 18NM80-VB can also be used in battery management systems to achieve efficient charge and discharge control of high-voltage battery packs.
5. **Photovoltaic Inverter**: In photovoltaic inverter, 18NM80-VB can be used to realize the conversion of DC power generated by solar panels to AC power with high efficiency and stability.
In short, 18NM80-VB is a powerful and reliable high-voltage MOSFET suitable for various high-voltage applications and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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