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18NM80-VB TO247 Product details
Back to previous pageProduct introduction：
### Product Introduction
18NM80-VB is a single N-channel field effect transistor (MOSFET) using SJ_Multi-EPI technology, with a drain-source voltage (VDS) of up to 800V and a drain current (ID) capability of 20A. The device adopts TO247 package and is suitable for a variety of fields and modules, providing reliable performance and efficient power control.
18NM80-VB is a single N-channel field effect transistor (MOSFET) using SJ_Multi-EPI technology, with a drain-source voltage (VDS) of up to 800V and a drain current (ID) capability of 20A. The device adopts TO247 package and is suitable for a variety of fields and modules, providing reliable performance and efficient power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 800V | 3.5V | 20A | 220mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### Parameter Description
- **Model:** 18NM80-VB TO247
- **Package:** TO247
- **Structure:** Single N-channel
- **VDS (Drain-Source Voltage):** 800V
- **VGS (Gate-Source Voltage):** ±30V
- **Vth (Threshold Voltage):** 3.5V
- **RDS(ON) (On-Resistance):** 220mΩ @ VGS=10V
- **ID (Drain Current):** 20A
- **Technology:** SJ_Multi-EPI
Domain and module applications：
### Applications and Module Examples
1. **Electric Vehicle Charging Station:** This MOSFET is suitable for the power switching circuit in the electric vehicle charging station to ensure a high efficiency and reliability of the charging process.
2. **Industrial Power Supply:** In the industrial field, 18NM80-VB can be used in high voltage and high current industrial power supply systems, such as welding machines, electric furnaces, and industrial automation equipment.
3. **Power Transmission:** Due to its high voltage characteristics, this MOSFET can be used in the power switching circuit in the power transmission system to improve the efficiency and reliability of the system.
4. **Medical Equipment:** In medical equipment that requires high voltage and high current, 18NM80-VB can be used in applications such as X-ray machines, MRI equipment, etc.
5. **Photovoltaic Inverter:** In solar photovoltaic inverters, this MOSFET can be used to convert solar energy into usable electrical energy, providing efficient energy conversion.
The above are some examples of areas and modules where 18NM80-VB can be applied, but it is not limited to these. The specific application depends on the design requirements and system needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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