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18NM60N-VB TO263 Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi 18NM60N-VB TO263 MOSFET is a single N-channel power MOSFET with a drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of 30V. It adopts SJ_Multi-EPI technology, has low on-resistance and high reliability, and is suitable for high-voltage power electronic applications.
VBsemi 18NM60N-VB TO263 MOSFET is a single N-channel power MOSFET with a drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of 30V. It adopts SJ_Multi-EPI technology, has low on-resistance and high reliability, and is suitable for high-voltage power electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed parameter description:
- **Package: ** TO263
- **Device type: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 650V
- **Maximum gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **Drain-source on-resistance (RDS(ON)): **
- At VGS = 10V: 300mΩ
- **Drain current (ID): ** 15A
- **Technology: ** SJ_Multi-EPI
Domain and module applications：
### Applications and module examples:
1. **Power modules:** 18NM60N-VB TO263 is suitable for high-voltage switching power supplies and DC-DC converters, and can be used in power modules in industrial and communication equipment.
2. **Solar inverters:** In solar inverters, this MOSFET can be used in DC-AC converters to provide high-efficiency energy conversion.
3. **Electric vehicle charging piles:** Due to its high drain-source voltage and low on-resistance, 18NM60N-VB TO263 is suitable for power switches in electric vehicle charging piles.
4. **Industrial control systems:** This MOSFET can be used in high-voltage switching devices in industrial control systems to provide reliable power control.
5. **High-voltage direct current transmission (HVDC) systems:** In HVDC systems, 18NM60N-VB TO263 can be used in switchgear to help achieve efficient energy transmission.
These examples illustrate the use of the 18NM60N-VB TO263 MOSFET in high voltage power applications, showcasing its high performance and reliability in a variety of fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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