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18NM60N-VB TO220F Product details
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VBsemi 18NM60N-VB TO220F MOSFET Product Introduction:
VBsemi's 18NM60N-VB TO220F is a single-channel N-channel MOSFET in a TO220F package. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, ±V) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 160mΩ @VGS=10V, and a drain current (ID) of 20A. It uses SJ_Multi-EPI technology.
VBsemi's 18NM60N-VB TO220F is a single-channel N-channel MOSFET in a TO220F package. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, ±V) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 160mΩ @VGS=10V, and a drain current (ID) of 20A. It uses SJ_Multi-EPI technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
18NM60N-VB TO220F detailed parameter description:
- Package: TO220F
- Type: Single channel N-channel
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): 30V (±V)
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 160mΩ @ VGS=10V
- Drain current (ID): 20A
- Technology: SJ_Multi-EPI
Domain and module applications：
Product application areas and module examples:
1. Power adapter: 18NM60N-VB TO220F is suitable for the switching power supply circuit in the power adapter, which can achieve high-efficiency energy conversion.
2. Electric vehicle charging pile: Since 18NM60N-VB TO220F has low on-resistance and high drain current, it can be used in the power switching circuit in the electric vehicle charging pile to improve the charging efficiency.
3. Industrial control system: In industrial control systems that require high voltage and high current, 18NM60N-VB TO220F can provide stable and reliable performance.
4. LED lighting driver: The high voltage and current characteristics of 18NM60N-VB TO220F are suitable for LED lighting driver circuits to ensure the stable operation of LED lamps.
The above is the product introduction, detailed parameter description and application examples of VBsemi 18NM60N-VB TO220F MOSFET in different fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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