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18N60L-T47-T-VB Product details
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VBsemi's MOSFET product 18N60L-T47-T-VB is a single-channel N-channel device with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, ±V) of 30V, and a threshold voltage (Vth) of 3.5V. The device uses Plannar technology. The following is a detailed introduction and parameter description of the product:
**Product Introduction: **
18N60L-T47-T-VB MOSFET is a high-performance single N-channel power MOSFET suitable for various high-voltage applications. It has low switching losses and high conduction capability, and is suitable for applications requiring high efficiency and reliability. The device is widely used in various fields and modules, such as power supply, motor control, lighting, communication equipment, etc.
**Product Introduction: **
18N60L-T47-T-VB MOSFET is a high-performance single N-channel power MOSFET suitable for various high-voltage applications. It has low switching losses and high conduction capability, and is suitable for applications requiring high efficiency and reliability. The device is widely used in various fields and modules, such as power supply, motor control, lighting, communication equipment, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 18A | 430mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
**Detailed parameters: **
- **VDS (drain-source voltage): ** 650V
- **VGS (gate-source voltage): ** 30V (±V)
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 430mΩ @ VGS=10V
- **Drain current (ID): ** 18A
- **Package: ** TO247
- **Technology: ** Plannar
Domain and module applications：
**Applicable fields and modules:**
18N60L-T47-T-VB is suitable for various fields and modules, including but not limited to:
1. **Power supply module:** Used in modules such as switching power supplies, inverters and voltage regulators to provide efficient power conversion and control.
2. **Motor control:** Used in electric vehicles, industrial machinery and household appliances to achieve efficient motor control and drive.
3. **Lighting applications:** Used in LED lighting, indoor lighting and automotive lighting to provide efficient and reliable lighting solutions.
4. **Communication equipment:** Used in communication base stations, satellite communications and optical fiber communications to achieve efficient signal processing and transmission.
In general, the 18N60L-T47-T-VB MOSFET is a power device with excellent performance and wide application, suitable for various high-voltage applications and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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