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18N50W-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi's 18N50W-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of 30V. The device is manufactured using SJ_Multi-EPI technology and has excellent performance and reliability. It has a drain-source on-resistance (RDS(ON)) of 190mΩ (at VGS=10V) and a maximum drain current (ID) of 20A. This makes the 18N50W-VB ideal for medium and high voltage applications such as power management, motor drives and other areas that require high-performance MOSFETs.
VBsemi's 18N50W-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of 30V. The device is manufactured using SJ_Multi-EPI technology and has excellent performance and reliability. It has a drain-source on-resistance (RDS(ON)) of 190mΩ (at VGS=10V) and a maximum drain current (ID) of 20A. This makes the 18N50W-VB ideal for medium and high voltage applications such as power management, motor drives and other areas that require high-performance MOSFETs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed parameter description
- **Package**：TO3P
- **Configuration**：Single-N-Channel
- **VDS**：600V
- **VGS**：30V（±）
- **Vth**：3.5V
- **RDS(ON)**：190mΩ @ VGS=10V
- **ID**：20A
- **Technology**：SJ_Multi-EPI
- **Package**：TO3P
- **Configuration**：Single-N-Channel
- **VDS**：600V
- **VGS**：30V（±）
- **Vth**：3.5V
- **RDS(ON)**：190mΩ @ VGS=10V
- **ID**：20A
- **Technology**：SJ_Multi-EPI
Domain and module applications：
### Applications and Module Examples
18N50W-VB is suitable for a variety of applications that require medium-high voltage, high-performance MOSFETs, including but not limited to:
1. **Power Management**: The high drain-source voltage and low on-resistance of 18N50W-VB make it ideal for use in medium-high voltage power management systems such as switching power supplies, power inverters, and power converters.
2. **Motor Driver**: 18N50W-VB can be used in medium-high voltage motor drivers in areas such as electric vehicles, industrial machinery, and household appliances, where it can provide high efficiency and reliability.
3. **Industrial Control**: In industrial control systems that need to control medium-high voltages and currents, 18N50W-VB can be used as a switching device to achieve efficient energy conversion.
4. **Lighting Application**: The high performance and reliability of 18N50W-VB make it an ideal choice for LED lighting drivers and other medium-high voltage lighting applications.
5. **Automotive electronics**: In automotive electronic systems, 18N50W-VB can be used in electric vehicle charging piles, DC-DC converters and other medium and high voltage applications.
In short, 18N50W-VB is a powerful and reliable medium and high voltage MOSFET suitable for a variety of medium and high voltage applications and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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