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18N50-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
18N50-VB is a single N-channel field effect transistor (MOSFET) using SJ_Multi-EPI technology, with a drain-source voltage (VDS) of up to 650V and a drain current (ID) capability of 20A. The device is packaged in TO220F and is suitable for a variety of fields and modules, providing reliable performance and efficient power control.
18N50-VB is a single N-channel field effect transistor (MOSFET) using SJ_Multi-EPI technology, with a drain-source voltage (VDS) of up to 650V and a drain current (ID) capability of 20A. The device is packaged in TO220F and is suitable for a variety of fields and modules, providing reliable performance and efficient power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Parameter Description
- **Model:** 18N50-VB
- **Package:** TO220F
- **Structure:** Single N-channel
- **VDS (Drain-Source Voltage):** 650V
- **VGS (Gate-Source Voltage):** ±30V
- **Vth (Threshold Voltage):** 3.5V
- **RDS(ON) (On-Resistance):** 160mΩ @ VGS=10V
- **ID (Drain Current):** 20A
- **Technology:** SJ_Multi-EPI
- **Model:** 18N50-VB
- **Package:** TO220F
- **Structure:** Single N-channel
- **VDS (Drain-Source Voltage):** 650V
- **VGS (Gate-Source Voltage):** ±30V
- **Vth (Threshold Voltage):** 3.5V
- **RDS(ON) (On-Resistance):** 160mΩ @ VGS=10V
- **ID (Drain Current):** 20A
- **Technology:** SJ_Multi-EPI
Domain and module applications：
### Applications and Module Examples
1. **Power Inverter:** The high voltage and current characteristics of 18N50-VB make it an ideal choice in inverters, and can be used in applications such as solar inverters, UPS systems, and industrial power supplies.
2. **Electric Vehicle Charging Station:** This MOSFET is suitable for the power switching circuit in electric vehicle charging stations to ensure high efficiency and reliability of the charging process.
3. **Industrial Control System:** In industrial control systems that require high voltage and high current, 18N50-VB can be used for applications such as driving motors, controlling electric furnaces and transformers.
4. **Power Management:** In the field of power management, this MOSFET can be used in switching power supplies, DC-DC converters, and power factor correction (PFC) circuits.
5. **Lighting Applications:** In LED lighting systems that require high brightness and high efficiency, 18N50-VB can provide reliable power switching functions to help achieve energy-saving and environmentally friendly lighting solutions.
The above are some examples of areas and modules where 18N50-VB can be applied, but it is not limited to these. The specific application depends on the design requirements and system needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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