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18N50G-TF1-T-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi's 18N50G-TF1-T-VB is a single N-channel MOSFET with high withstand voltage and low on-resistance. Using SJ_Multi-EPI technology, it is suitable for high-performance applications in various fields and modules.
VBsemi's 18N50G-TF1-T-VB is a single N-channel MOSFET with high withstand voltage and low on-resistance. Using SJ_Multi-EPI technology, it is suitable for high-performance applications in various fields and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description:
- **Packaging**: TO220F
- **Structure**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Packaging**: TO220F
- **Structure**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Application Examples:
1. **Power Inverter**: Due to its high withstand voltage characteristics, 18N50G-TF1-T-VB is suitable for inverter modules in power electronic equipment and can provide stable power conversion.
2. **Charging Pile**: In charging piles, this MOSFET can be used as a switch tube to achieve rapid control and conversion of electric energy.
3. **Solar Inverter**: In solar cell systems, this MOSFET can withstand higher operating voltages and is suitable for inverters and power conditioning modules.
4. **Electric Vehicle Charger**: In electric vehicle chargers, this MOSFET can be used for high-efficiency power conversion and improve charging speed.
5. **Industrial Power Supply**: In industrial power supply equipment, this MOSFET can be used in switching power supplies and UPS systems to provide stable and reliable power output.
The above is the product introduction, detailed parameter description and application example of 18N50G-TF1-T-VB.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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