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18N40L-TF1-T-VB Product details
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VBsemi 18N40L-TF1-T-VB MOSFET Product Introduction:
VBsemi's 18N40L-TF1-T-VB is a single-channel N-channel MOSFET in a TO220F package. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, ±V) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 160mΩ @VGS=10V, and a drain current (ID) of 20A. It uses SJ_Multi-EPI technology.
VBsemi's 18N40L-TF1-T-VB is a single-channel N-channel MOSFET in a TO220F package. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, ±V) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 160mΩ @VGS=10V, and a drain current (ID) of 20A. It uses SJ_Multi-EPI technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
18N40L-TF1-T-VB detailed parameter description:
- Package: TO220F
- Type: Single channel N-channel
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): 30V (±V)
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 160mΩ @ VGS=10V
- Drain current (ID): 20A
- Technology: SJ_Multi-EPI
Domain and module applications：
Product application areas and module examples:
1. Industrial power modules: The high voltage and high current characteristics of the 18N40L-TF1-T-VB make it very suitable for industrial power modules, which can provide stable power output.
2. Electric vehicle charging piles: Due to its low on-resistance and high drain current, the 18N40L-TF1-T-VB can be used in the power switching circuit in electric vehicle charging piles to improve charging efficiency.
3. Solar inverters: The high voltage and high current capabilities of the 18N40L-TF1-T-VB make it an ideal choice in solar inverters, which are used to convert the DC power generated by solar panels into AC power.
4. Power management modules: In applications that require high-efficiency management and stable output, such as power management modules, the 18N40L-TF1-T-VB can provide reliable performance.
5. LED lighting driver: The high voltage and current characteristics of 18N40L-TF1-T-VB are suitable for LED lighting driver circuits to ensure the stable operation of LED lamps.
The above is a product introduction, detailed parameter description and application examples of VBsemi 18N40L-TF1-T-VB MOSFET in different fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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