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18N20GS-VB Product details
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### Product Introduction
VBsemi's 18N20GS-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of 20V. The device is manufactured using Trench technology and has excellent performance and reliability. Its drain-source on-resistance (RDS(ON)) is 48mΩ (at VGS=10V) and the maximum drain current (ID) is 40A. This makes the 18N20GS-VB ideal for high-voltage applications such as power management, motor drives and other areas that require high-performance MOSFETs.
VBsemi's 18N20GS-VB is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of 20V. The device is manufactured using Trench technology and has excellent performance and reliability. Its drain-source on-resistance (RDS(ON)) is 48mΩ (at VGS=10V) and the maximum drain current (ID) is 40A. This makes the 18N20GS-VB ideal for high-voltage applications such as power management, motor drives and other areas that require high-performance MOSFETs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed parameter description
- **Package**：TO263
- **Configuration**：Single-N-Channel
- **VDS**：200V
- **VGS**：20V（±）
- **Vth**：3V
- **RDS(ON)**：48mΩ @ VGS=10V
- **ID**：40A
- **Technology**：Trench
Domain and module applications：
### Applications and Module Examples
18N20GS-VB is suitable for a variety of applications that require high-voltage, high-performance MOSFETs, including but not limited to:
1. **Power Management**: The high drain-source voltage and low on-resistance of 18N20GS-VB make it ideal for use in power management systems such as switching power supplies, power inverters, and power converters.
2. **Motor Driver**: 18N20GS-VB can be used in motor drivers for electric vehicles, industrial machinery, and home appliances, where it provides high efficiency and reliability.
3. **Industrial Control**: In industrial control systems that need to control high voltages and currents, 18N20GS-VB can be used as a switching device to achieve efficient energy conversion.
4. **Lighting Application**: The high performance and reliability of 18N20GS-VB make it an ideal choice for LED lighting drivers and other lighting applications.
5. **Automotive electronics**: In automotive electronic systems, 18N20GS-VB can be used in electric vehicle charging piles, DC-DC converters and other high-voltage applications.
In short, 18N20GS-VB is a powerful and reliable MOSFET suitable for a variety of high-voltage applications and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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