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185N55F3-VB TO263 Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi 185N55F3-VB TO263 MOSFET is a single N-channel power MOSFET with a drain-source voltage (VDS) of 60V and a maximum gate-source voltage (VGS) of 20V. It features the use of trench technology, low resistance and high current carrying capacity, suitable for high-performance power electronics applications.
VBsemi 185N55F3-VB TO263 MOSFET is a single N-channel power MOSFET with a drain-source voltage (VDS) of 60V and a maximum gate-source voltage (VGS) of 20V. It features the use of trench technology, low resistance and high current carrying capacity, suitable for high-performance power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 210A | 12mΩ | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed parameter description:
- **Package: ** TO263
- **Device type: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 60V
- **Maximum gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 3V
- **Drain-source on-resistance (RDS(ON)): **
- When VGS = 4.5V: 12mΩ
- When VGS = 10V: 3.2mΩ
- **Drain current (ID): ** 210A
- **Technology: ** Trench
- **Package: ** TO263
- **Device type: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 60V
- **Maximum gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 3V
- **Drain-source on-resistance (RDS(ON)): **
- When VGS = 4.5V: 12mΩ
- When VGS = 10V: 3.2mΩ
- **Drain current (ID): ** 210A
- **Technology: ** Trench
Domain and module applications：
### Applications and module examples:
1. **Power modules:** 185N55F3-VB TO263 can be used in switching power supplies and DC-DC converters in high-efficiency power modules to help achieve miniaturization and high power density.
2. **Motor drives:** In motor drives, this MOSFET can be used in high-performance DC motor drives to achieve high efficiency and high power output.
3. **Photovoltaic inverters:** Due to its low on-resistance and high drain-source voltage, 185N55F3-VB TO263 is suitable for power switches in photovoltaic inverters to help improve energy conversion efficiency.
4. **Automotive electronics:** In the field of automotive electronics, this MOSFET can be used in electric vehicle charging piles, battery management systems (BMS), and on-board DC-DC converters to provide efficient energy management solutions.
5. **Industrial automation:** 185N55F3-VB TO263 is suitable for high-power switches and inverters in industrial automation equipment to provide reliable power control and conversion.
These examples illustrate the wide range of applications of the 185N55F3-VB TO263 MOSFET in various fields and modules, demonstrating its high performance and versatility.
1. **Power modules:** 185N55F3-VB TO263 can be used in switching power supplies and DC-DC converters in high-efficiency power modules to help achieve miniaturization and high power density.
2. **Motor drives:** In motor drives, this MOSFET can be used in high-performance DC motor drives to achieve high efficiency and high power output.
3. **Photovoltaic inverters:** Due to its low on-resistance and high drain-source voltage, 185N55F3-VB TO263 is suitable for power switches in photovoltaic inverters to help improve energy conversion efficiency.
4. **Automotive electronics:** In the field of automotive electronics, this MOSFET can be used in electric vehicle charging piles, battery management systems (BMS), and on-board DC-DC converters to provide efficient energy management solutions.
5. **Industrial automation:** 185N55F3-VB TO263 is suitable for high-power switches and inverters in industrial automation equipment to provide reliable power control and conversion.
These examples illustrate the wide range of applications of the 185N55F3-VB TO263 MOSFET in various fields and modules, demonstrating its high performance and versatility.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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