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17N80C3-VB TO247 Product details
Back to previous pageProduct introduction：
### Product Introduction:
17N80C3-VB is a single N-channel MOSFET using SJ_Multi-EPI technology, produced by VBsemi. This MOSFET has high drain-source voltage (VDS) and low on-resistance (RDS(ON)), suitable for a variety of high-voltage applications requiring high performance and reliability.
17N80C3-VB is a single N-channel MOSFET using SJ_Multi-EPI technology, produced by VBsemi. This MOSFET has high drain-source voltage (VDS) and low on-resistance (RDS(ON)), suitable for a variety of high-voltage applications requiring high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 800V | 3.5V | 20A | 220mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### Detailed parameter description:
- **Package: ** TO247
- **VDS (drain-source voltage): ** 800V
- **VGS (gate-source voltage): ** ±30V
- **Vth (gate threshold voltage): ** 3.5V
- **RDS(ON) (on-resistance): ** 220mΩ @ VGS=10V
- **ID (drain current): ** 20A
Domain and module applications：
### Applications and module examples:
1. **Power converters:** The 17N80C3-VB is suitable for high-efficiency power converter modules such as server power supplies, communication equipment, and industrial power supplies.
2. **Solar inverters:** In solar inverters, this MOSFET can be used as a high-performance switching device to provide stable power conversion.
3. **Electric vehicle charging piles:** This MOSFET can be used in switching power supplies in electric vehicle charging piles. Its high drain-source voltage and drain current can support fast charging and high efficiency.
The above are just a few examples of possible applications for the 17N80C3-VB. The specific application depends on the design requirements and environmental conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
