中文
English
17N80C3-VB TO220F Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi 17N80C3-VB TO220F is a high-performance single N-channel metal oxide semiconductor field effect transistor (MOSFET) that uses SJ_Multi-EPI technology and has the characteristics of high voltage tolerance and low on-resistance, suitable for high power applications.
VBsemi 17N80C3-VB TO220F is a high-performance single N-channel metal oxide semiconductor field effect transistor (MOSFET) that uses SJ_Multi-EPI technology and has the characteristics of high voltage tolerance and low on-resistance, suitable for high power applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 20A | 205mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
- **Model**: 17N80C3-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 205mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: 17N80C3-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 205mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Applications and Modules
#### Power Management
17N80C3-VB TO220F is suitable for applications such as high-power switching power supplies (SMPS), DC-DC converters, and power factor correction (PFC). Its low on-resistance and high drain current capability help improve system efficiency and stability.
#### Industrial Electronics
In the field of industrial control, this MOSFET can be used in applications such as motor drivers, high-power switches, and inverters. Its high voltage tolerance and high current capability enable it to cope with various high-power load requirements in industrial environments.
#### Lighting Systems
17N80C3-VB TO220F can also be applied to high-voltage LED drivers and power modules to provide high-efficiency lighting solutions. Its high drain current and low on-resistance help reduce the system's energy consumption and improve lighting quality.
#### Electric Vehicle Charging Pile
In electric vehicle charging piles, this type of MOSFET can be used for high power control and battery management systems, with high efficiency and high power handling capabilities, ensuring the stability and safety of the charging pile.
In short, VBsemi 17N80C3-VB TO220F MOSFET is suitable for a variety of high-power and high-voltage applications, with excellent performance and stability, and is an ideal choice for industries such as industry, power management and electric vehicle charging piles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
