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170N04N-VB Product details
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### 170N04N-VB TO252 MOSFET Product Introduction
**Product Introduction:**
VBsemi's 170N04N-VB is a high-performance single N-channel metal oxide semiconductor field effect transistor (MOSFET) manufactured using advanced trench technology. It has a low on-resistance (RDS(ON)) and is suitable for a drain-source voltage (VDS) of 40V, providing stable and reliable power switching performance.
**Product Introduction:**
VBsemi's 170N04N-VB is a high-performance single N-channel metal oxide semiconductor field effect transistor (MOSFET) manufactured using advanced trench technology. It has a low on-resistance (RDS(ON)) and is suitable for a drain-source voltage (VDS) of 40V, providing stable and reliable power switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 40V | 2.5V | 55A | 14mΩ | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### 170N04N-VB TO252 MOSFET Detailed parameter description
**Package type: ** TO252
**Configuration: ** Single N-channel
**Drain-source voltage (VDS): ** 40V
**Gate-source voltage (VGS): ** 20 (±V)
**Threshold voltage (Vth): ** 2.5V
**On-resistance (RDS(ON)): **
- 14mΩ@VGS=4.5V
- 12mΩ@VGS=10V
**Drain current (ID): ** 55A
**Technology: ** Trench
**Package type: ** TO252
**Configuration: ** Single N-channel
**Drain-source voltage (VDS): ** 40V
**Gate-source voltage (VGS): ** 20 (±V)
**Threshold voltage (Vth): ** 2.5V
**On-resistance (RDS(ON)): **
- 14mΩ@VGS=4.5V
- 12mΩ@VGS=10V
**Drain current (ID): ** 55A
**Technology: ** Trench
Domain and module applications：
### 170N04N-VB TO252 MOSFET Applicable fields and modules
**Application fields:**
1. **Power inverter:**
- Due to its low on-resistance and high drain-source voltage characteristics, it is suitable for various power inverters, providing efficient energy conversion and stable power output.
2. **Electric vehicle control:**
- Suitable for motor control and battery management systems in electric vehicles, capable of supporting high-power and high-efficiency electric vehicle operation.
3. **Industrial automation:**
- In industrial control systems, it can be used in various power switch modules such as inverters and servo drives, providing stable current control and efficient energy conversion.
4. **Lighting applications:**
- Suitable for power switch modules in LED lighting drivers and other high-power lighting applications, providing efficient lighting solutions.
5. **Power management system: **
- Power switch modules that can be used in various power management systems to support efficient energy management and stable power output.
Through these application examples, it can be seen that 170N04N-VB TO252 MOSFET can provide high-efficiency power switch solutions in multiple fields and modules to meet the needs of different application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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