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16NS25-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**16N50L-TF3-T-VB** is a single N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) produced by VBsemi. This product is packaged in TO263 and is suitable for medium voltage high power applications. The 16N50L-TF3-T-VB MOSFET is manufactured using Plannar technology and has high drain-source voltage and current carrying capability.
**16N50L-TF3-T-VB** is a single N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) produced by VBsemi. This product is packaged in TO263 and is suitable for medium voltage high power applications. The 16N50L-TF3-T-VB MOSFET is manufactured using Plannar technology and has high drain-source voltage and current carrying capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 250V | 3.5V | 16A | 230mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 250V | 3.5V | 16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 250V | 3.5V | 16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed parameter description
- **Model**: 16N50L-TF3-T-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
- **Model**: 16N50L-TF3-T-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
Domain and module applications：
### Applications and Module Examples
1. **Power Inverter**:
16N50L-TF3-T-VB is suitable for power switch control in medium voltage power inverters. Its high drain-source voltage and current carrying capacity enable it to provide reliable performance in medium power applications.
2. **Industrial Motor Control**:
In industrial motor control systems, 16N50L-TF3-T-VB can be used for power switch control of motor drives. Its high drain-source voltage and current carrying capacity can meet the requirements of industrial production equipment.
3. **Lighting Application**:
This MOSFET is suitable for power switch control in LED lighting drivers. Its high efficiency and high reliability help improve the performance and reliability of LED lighting systems.
4. **Power Management**:
In power management systems, 16N50L-TF3-T-VB can be used for high-efficiency DC-DC converters and inverters. Its low on-resistance and high current carrying capacity can improve the efficiency and stability of the system.
16N50L-TF3-T-VB is suitable for a variety of medium voltage and high power application scenarios with its high reliability and stability, and is an ideal choice for power control circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
