VBP1102N Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 20(±V) | 1.8V | 72A | 18 (mΩ) | Trench |
- Type: Single N-channel MOSFET
- Rated voltage (VDS): 100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source on-resistance (m次) at VGS=10V: 18m次
- Drain current (ID): 72A
- Technology: Trench MOSFET
-Package: TO247
Domain and module applications:
1. Industrial power module:
VBP1102N is suitable for power switches and power control circuits in industrial power modules. Its high drain current and low on-resistance can effectively provide stable power output and achieve high-efficiency power conversion, making it an ideal choice for industrial equipment and machinery.
2. Automotive electronic modules:
In automotive electronic modules, VBP1102N can be used in power management systems for electric vehicles, hybrid vehicles and traditional vehicles. Its high performance and reliability can ensure the stability and safety of electric vehicles, while improving the energy efficiency of electric vehicles, meeting the automotive industry's requirements for high performance and low energy consumption.
3. Power inverter module:
In power inverter modules such as solar inverters, grid inverters and UPS (uninterruptible power supplies), VBP1102N can be used as switching pipe fittings to achieve conversion and control of electrical energy. Its high rated voltage and large drain current can adapt to power inverter systems of different sizes and ensure high performance and reliability.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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