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16N50H-VB TO220F Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi's 16N50H-VB is a single N-channel MOSFET in a TO220F package, designed to withstand a maximum drain-source voltage (VDS) of 550V. This MOSFET has a gate-source voltage (VGS) of 30V (±) and a threshold voltage (Vth) of 3V. At VGS=10V, its on-resistance RDS(ON) is 260mΩ and has a drain current (ID) of 18A.
VBsemi's 16N50H-VB is a single N-channel MOSFET in a TO220F package, designed to withstand a maximum drain-source voltage (VDS) of 550V. This MOSFET has a gate-source voltage (VGS) of 30V (±) and a threshold voltage (Vth) of 3V. At VGS=10V, its on-resistance RDS(ON) is 260mΩ and has a drain current (ID) of 18A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Parameter Description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage**: 550V
- **Gate-source voltage**: 30V (±)
- **Threshold voltage**: 3V
- **On-resistance**: 260mΩ @ VGS=10V
- **Maximum drain current**: 18A
- **Technology**: Planar
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage**: 550V
- **Gate-source voltage**: 30V (±)
- **Threshold voltage**: 3V
- **On-resistance**: 260mΩ @ VGS=10V
- **Maximum drain current**: 18A
- **Technology**: Planar
Domain and module applications：
### Applicable fields and modules
1. **Power switch**: Due to its high drain-source voltage and low on-resistance, 16N50H-VB is suitable for power switch modules and can provide efficient power switch control.
2. **Lighting power supply**: In lighting power supply, this MOSFET can be used in high-voltage LED drive circuits to help achieve efficient lighting system design.
3. **Power tool**: In industrial power tools, 16N50H-VB can be used as a switching element for motors to help achieve high-power and high-efficiency power tool design.
4. **Solar inverter**: Used for switching power supply and inverter control in solar inverters to achieve efficient conversion of solar power.
5. **Electric vehicle charging pile**: In electric vehicle charging piles, this MOSFET can be used for power control of high-voltage DC charging piles to improve charging efficiency.
The above is a paragraph-based description of the product introduction, detailed parameter description, and applicable fields and modules of 16N50H-VB.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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